Vyhledávat v databázi titulů je možné dle ISBN, ISSN, EAN, č. ČNB, OCLC či vlastního identifikátoru. Vyhledávat lze i v databázi autorů dle id autority či jména.
Projekt ObalkyKnih.cz sdružuje různé zdroje informací o knížkách do jedné, snadno použitelné webové služby. Naše databáze v tuto chvíli obsahuje 3152128 obálek a 950683 obsahů českých a zahraničních publikací. Naše API využívá většina knihoven v ČR.
Autor: Scott, J. F.
Rok: 2000
ISBN: 9783540663874
NKP-CNB: aba013-000163526
OKCZID: 129431602
Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied physicists, electrical engineers, materials scientists and ceramists, it includes ferroelectric fundamentals, especially for thin films, circuit diagrams and processsing chapters, but emphazises device physics. Breakdown mechanisms, switching kinetics and leakage current mechanisms have lengthly chapters devoted to them. The book will be welcomed by research scientists in industry and government laboratories and in universities. It also contains 76 problems for students, making it particularly useful as a textbook for fourth-year undergraduate or first-year graduate students.
Zdroj anotace: OKCZ - ANOTACE Z WEBU