Semiconductor Interfaces: Formation and Properties. Proceedings of the Workshop, Les Houches, France, February 24 - March 6, 1987 (Springer Proceedings in Physics)

Rok: 1987
ISBN: 9783540183280
OKCZID: 110407077

Citace (dle ČSN ISO 690):
LELAY, G., ed., DERRIEN, J., ed. a BOCCARA, N., ed. Semiconductor interfaces: formation and properties : proceedings of the workshop, Les Houches, France February 24 - March 6, 1987. Berlin: Springer-Verlag, c1987. xi, 389 s. Springer proceedings in physics, vol. 22.

Anotace

The trend towards miniaturization of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role upon semiconductor interfaces. Great advances have recently been made in the production of new thin-film materials and in the characterization of their interfacial properties down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures given by specialists at the International Winter School on "Semiconductor Interfaces: Formation and Properties", which was held at the Centre de Physique des Houches from 24 February to 6 March, 1987. The following topics are particularly emphasised: - Interface formation, including molecular beam epitaxy, the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. - Characterization down to the atomic scale using techniques such as STM, HRTEM, SEXAFS and SEELFS. - Specific physical properties of the interfaces and their prospective device applications.

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