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Silicon wafer bonding technology for VLSI and MEMS applications
Rok: c2002.
ISBN: 9780852960394
OKCZID: 110108339
Citace (dle ČSN ISO 690):
IYER, Subramanian S., ed. a AUBERTON-HERVÉ, Andre J., ed. Silicon wafer bonding technology for VLSI and MEMS applications. London: Institution of Electrical Engineers, c2002. xxv, 149 s. EMIS processing series, no. 1.
Anotace
The use of silicon-on-insulator (SOI) technology in microelectronics is proliferating and is ready to be applied in a growing number of IC fabrication situations. Bonding of single crystal Si to dielectrics, normally silicon dioxide, is a key method of producing SOI structures and this work is designed to assist engineers directly in applying emerging SOI technology in practice. Wafer bonding principles, grind and polish back, Smartcut, Eltran and wafer characterization are all explained and illustrated for the benefit of the process development engineer. Also available:Silicide Technology for Integrated Circuits - ISBN 9780863413520Fabrication of GaAs Devices - ISBN 9780863413537The Institution of Engineering and Technology is one of the world's leading professional societies for the engineering and technology community. The IET publishes more than 100 new titles every year; a rich mix of books, journals and magazines with a back catalogue of more than 350 books in 18 different subject areas including: -Power & Energy -Renewable Energy -Radar, Sonar & Navigation -Electromagnetics -Electrical Measurement -History of Technology -Technology Management